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CYRS1049DV33: 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology | Cypress Semiconductor

CYRS1049DV33: 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology

Last Updated: 
Nov 15, 2017
Version: 
*G

4-Mbit (512 K × 8) Static RAM with RadStop™ Technology

Features

  • Temperature ranges
    • Military/Space: -55 °C to 125 °C
  • High speed
    • tAA = 12 ns
  • Low active power
    • ICC = 95 mA at 12 ns (PMAX = 315 mW)
  • Low CMOS standby power
    • ISB2 = 15 mA
  • 2.0 V data retention
  • Automatic power-down when deselected
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • Available in Pb-free 36-pin ceramic flat package
     

Functional Description

The CYRS1049DV33 is a high-performance complementary metal oxide semiconductor (CMOS) static RAM organized as 512 K words by 8 bits with RadStop™ technology. Cypress’s state-of-the-art RadStop technology is radiation hardened through proprietary design and process hardening techniques. The 4-Mbit fast asynchronous SRAM with RadStop technology is also QML V certified with Defense Logistics Agency Land and Maritime (DLAM).