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CY7C25632KV18, CY7C25652KV18: 72-Mbit QDR®II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT | Cypress Semiconductor

CY7C25632KV18, CY7C25652KV18: 72-Mbit QDR®II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Last Updated: 
Nov 30, 2017
Version: 
*I

72-Mbit QDR®II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Features

  • Separate independent read and write data ports
    • Supports concurrent transactions
  • 550 MHz clock for high bandwidth
  • 4-word burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
  • Available in 2.5 clock cycle latency
  • Two input clocks (K and K) for precise DDR timing
    • SRAM uses rising edges only
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • For more, see pdf
     

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.