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CY7C106D, CY7C1006D: 1-Mbit (256 K x 4) Static RAM | Cypress Semiconductor

CY7C106D, CY7C1006D: 1-Mbit (256 K x 4) Static RAM

Last Updated: 
Aug 28, 2015
Version: 
*K

1-Mbit (256 K x 4) Static RAM

Features

  • Pin- and function-compatible with CY7C106B/CY7C1006B
  • High speed
    • tAA = 10 ns
  • Low active power
    • ICC = 80 mA @ 10 ns
  • Low CMOS standby power
    • ISB2 = 3.0 mA
  • 2.0 V Data Retention
  • Automatic power-down when deselected
  • For more, see pdf

Functional Description

The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.