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CY7C1069G, CY7C1069GE: 16-Mbit (2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY7C1069G, CY7C1069GE: 16-Mbit (2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Dec 07, 2017
Version: 
*J

16-Mbit (2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC)

Features

  • High speed
    • tAA = 10 ns
  • Embedded error-correcting code (ECC) for single-bit error correction
  • Low active and standby currents
    • ICC = 90 mA typical at 100 MHz
    • ISB2 = 20 mA typical
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • 1.0-V data retention
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • ERR pin to indicate 1-bit error detection and correction
  • Available in Pb-free 54-pin TSOP II, and 48-ball VFBGA packages

Functional Description

The CY7C1069G and CY7C1069GE are dual chip enable high-performance CMOS fast static RAM devices with embedded ECC. The CY7C1069G device is available in standard pin configurations. The CY7C1069GE device includes a single bit error indication pin (ERR) that signals the host processor in the case of an ECC error-detection and correction event.

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