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CY7C1061GN/CY7C10612GN, 16-Mbit (1M words × 16 bit) Static RAM | Cypress Semiconductor

CY7C1061GN/CY7C10612GN, 16-Mbit (1M words × 16 bit) Static RAM

Last Updated: 
Dec 01, 2016
Version: 
*C

Features

  • High speed
    • tAA= 10 ns/ 15 ns
  • Low active power
    • ICC= 90 mA at 100 MHz
  • Low CMOS standby current
    • ISB2= 20 mA (typ)
  • Operating voltages of 2.2 V to 3.6 V
  • 1.0 V data retention
  • Automatic power down when deselected
  • TTL compatible inputs and outputs
  • Easy memory expansion with CE1and CE2 features
  • Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages
  • Offered in dual Chip Enable options

Functional Description

The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits.

To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See Truth Table on page 12 for a complete description of Read and Write modes. The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE1 HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).