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CY7C1061G, CY7C1061GE: 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY7C1061G, CY7C1061GE: 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Jan 17, 2017
Version: 
*R

16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC)

Features

  • High speed
    • tAA = 10 ns/15 ns
  • Embedded error-correcting code (ECC) for single-bit error correction
  • Low active and standby currents
    • ICC = 90-mA typical at 100 MHz
    • ISB2 = 20-mA typical
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
  • 1.0-V data retention
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • Error indication (ERR) pin to indicate 1-bit error detection and correction
  • Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages

Functional Description

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.

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