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CY7C1051H Automotive, 8-mbit (512 K X 16) Static RAM With Error-correcting Code | Cypress Semiconductor

CY7C1051H Automotive, 8-mbit (512 K X 16) Static RAM With Error-correcting Code

Last Updated: 
Dec 07, 2016
Version: 
*F

Features

Temperature ranges

  • Automotive-E: –40 °C to +125 °C

High speed

  • tAA = 10 ns

Low active and standby currents

  • ICC = 90 mA typical
  • ISB2 = 20 mA typical

1.0 V data retention

Automatic power-down when deselected

Transistor-transistor logic (TTL)-compatible inputs and outputs

Easy memory expansion with CE and OE features

Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) package

Functional Description

The CY7C1051H is a high-performance CMOS fast static RAM automotive part with embedded ECC. To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then data from I/O pins (I/O0–I/O7), is written into the location specified on the address pins (A0–A18). If Byte HIGH Enable (BHE) is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A18). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte LOW Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0–I/O7. If Byte HIGH Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. The input/output pins (I/O0–I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or a write operation (CE LOW, and WE LOW) is in progress. The CY7C1051H is available in a 48-ball VFBGA package.