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CY7C1051H, 8-Mbit (512 K Words X 16 Bit) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY7C1051H, 8-Mbit (512 K Words X 16 Bit) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Nov 21, 2016
Version: 
*B

CY7C1051H is a high-performance CMOS fast static RAM device with embedded ECC. To access device, assert the chip enable (CE) input LOW. To perform data writes, assert the Write Enable (WE) input LOW, and provide the data and address on the device data pins (I/O0 through I/O15) and address pins (A0 through A18) respectively. The Byte High Enable (BHE) and Byte Low Enable (BLE) inputs control byte writes, and write data on the corresponding I/O lines to the memory location specified. BHE controls I/O8 through I/O15 and BLE controls I/O0 through I/O7.