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CY7C1051DV33: 8-Mbit (512 K × 16) Static RAM | Cypress Semiconductor

CY7C1051DV33: 8-Mbit (512 K × 16) Static RAM

Last Updated: 
Oct 26, 2016
Version: 
*J

8-Mbit (512K x 16) Static RAM

Features

  • Temperature ranges
    • –40 °C to 85 °C
  • High speed
    • tAA = 10 ns
  • Low active power
    • ICC = 110 mA at 10 ns
  • Low CMOS standby power
    • ISB2 = 20 mA
  • 2.0V data retention
  • Automatic power down when deselected
  • Transistor-transistor logic (TTL)-compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • Available in Pb-free 48-ball fine ball grid array (FBGA) and 44-pin thin small outline package (TSOP) II packages

Functional Description

The CY7C1051DV33 is a high performance CMOS Static RAM organized as 512 K words by 16-bits.

To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then data from I/O pins (I/O0–I/O7), is written into the location specified on the address pins (A0–A18). If Byte HIGH Enable (BHE) is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A18).