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CY7C1049BN: 512 K × 8 Static RAM | Cypress Semiconductor

CY7C1049BN: 512 K × 8 Static RAM

Last Updated: 
Aug 25, 2015

512 K × 8 Static RAM


  • High speed
    • tAA = 17 ns
  • Low active power
    • 1073 mW (max.)
  • Low CMOS standby power
    • 2.75 mW (max.)
  • 2.0 V data retention (400 μW at 2.0 V retention)
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • For more, see pdf.

Functional Description

The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).