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CY7C1041G, CY7C1041GE: 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY7C1041G, CY7C1041GE: 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Nov 21, 2016
Version: 
*K

4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC)

Features

  • High speed
    • tAA = 10 ns
  • Embedded ECC for single-bit error correction[1]
  • Low active and standby currents
    • Active current: ICC = 38-mA typical
    • Standby current: ISB2 = 6-mA typical
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
  • 1.0-V data retention
  • TTL-compatible inputs and outputs
  • Error indication (ERR) pin to indicate 1-bit error detection and correction
  • Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages

Functional Description

CY7C1041G and CY7C1041GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1041GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

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