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CY7C1041BN: 256K x 16 Static RAM | Cypress Semiconductor

CY7C1041BN: 256K x 16 Static RAM

Last Updated: 
Dec 07, 2017
Version: 
*K

256 K × 16 Static RAM

Features

  • Temperature range:
    • Commercial: 0 °C to 70 °C
    • Automotive-A: –40 °C to 85 °C
  • High speed
    • tAA = 15 ns
  • Low active power
    • 1540 mW (max.)
  • Low CMOS standby power
    • 2.75 mW (max.)
  • For more, see pdf.

Functional Description

The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).