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CY7C024E, CY7C025E, CY7C0251E: 4 K × 16/18 and 8 K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY | Cypress Semiconductor

CY7C024E, CY7C025E, CY7C0251E: 4 K × 16/18 and 8 K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY

Last Updated: 
Aug 21, 2017
Version: 
*H

4 K × 16 and 8 K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY

Features

  • True dual-ported memory cells that allow simultaneous reads of the same memory location
  • 4 K × 16 organization (CY7C024E)
  • 8 K × 16 organization (CY7C025E)
  • 8 K × 18 organization (CY7C0251E)
  • 0.35-μ complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • High-speed access: 15 ns
  • Low operating power: ICC = 180 mA (typ), ISB3 = 0.05 mA (typ)
  • Fully asynchronous operation
  • Automatic power-down
  • For more, see pdf.

Functional Description

The CY7C024E and CY7C025E/CY7C0251E are low-power CMOS 4K × 16 and 8K × 16/18 dual-port static RAMs. Various arbitration schemes are included on the CY7C024E and CY7C025E/CY7C0251E to handle situations when multiple processors access the same piece of data. Two ports are provided, permitting independent, asynchronous access for reads and writes to any location in memory.