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CY7C024AV/025AV/026AV: 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM | Cypress Semiconductor

CY7C024AV/025AV/026AV: 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM

Last Updated: 
Aug 08, 2017
Version: 
*T

3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM

Features

  • True dual-ported memory cells which enable simultaneous access of the same memory location
  • 4, 8 or 16 K × 16 organization (CY7C024AV/025AV/026AV)
  • 0.35 micron CMOS for optimum speed and power
  • High speed access: 20 ns and 25 ns
  • Low operating power
    • Active: ICC = 115 mA (typical)
    • Standby: ISB3 = 10 μA (typical)
  • Fully asynchronous operation
  • Automatic power down
  • For more, see pdf

Functional Description

The CY7C024AV/025AV/026AV consist of an array of 4 K, 8 K, and 16 K words of 16 bits each of dual-port RAM cells, IO and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes and reads to the same location, a BUSY pin is provided on each port. Two Interrupt (INT) pins can be used for port to port communication.