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CY62256EV18: 256-Kbit (32 K × 8) Static RAM | Cypress Semiconductor

CY62256EV18: 256-Kbit (32 K × 8) Static RAM

Last Updated: 
Sep 24, 2015

256-Kbit (32 K × 8) Static RAM


  • Very high speed: 70 ns
  • Temperature ranges:
    • Industrial: –40 °C to +85 °C
  • Wide voltage range: 1.65 V to 2.25 V
  • Pin compatible with CY62256N
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 4 μA
  • Ultra low active power
    • Typical active current: 1.3 mA at f = 1 MHz

Functional Description

The CY62256EV18 is a high performance CMOS static RAM module organized as 32 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or a write operation is in progress (CE LOW and WE LOW).