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CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM | Cypress Semiconductor

CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM

Last Updated: 
Nov 09, 2015

64-Mbit (4M x 16) Static RAM


  • Very High Speed
    • 55 ns
  • Wide Voltage Range
    • 2.2V to 3.7V
  • Ultra Low Standby Power
    • Typical Standby Current: 8 μA
    • Maximum Standby Current: 48 μA
  • Ultra Low Active Power
    • Typical Active Current: 7.5 mA at f = 1 MHz
  • Easy Memory Expansion with CE1, CE2, and OE Features
  • Automatic Power Down when Deselected
  • CMOS for Optimum Speed and Power
  • Available in Pb-Free 48-Ball FBGA Package

Functional Description

The CY62187EV30 is a high performance CMOS static RAM organized as 4 M words by 16-bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.