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CY62177EV30 MoBL 32-Mbit (2 M × 16 / 4 M × 8) Static RAM | Cypress Semiconductor

CY62177EV30 MoBL 32-Mbit (2 M × 16 / 4 M × 8) Static RAM

Last Updated: 
Nov 19, 2015
Version: 
*N

32-Mbit (2 M × 16 / 4 M × 8) Static RAM

Features

  • Thin small outline package (TSOP) I configurable as 2M x 16 or as 4M x 8 static RAM (SRAM)
  • Very high speed
    • 55 ns
  • Wide voltage range
    • 2.2 V to 3.7 V
  • Ultra low standby power
    • Typical standby current: 3 μA
    • Maximum standby current: 25 μA
  • Ultra low active power
  • For more, see pdf

Functional Description

The CY62177EV30 is a high performance CMOS static RAM organized as 2M words by 16 bits and 4M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.