You are here

CY62177EV18 MoBL®: 32-Mbit (2 M × 16 / 4 M × 8) Static RAM | Cypress Semiconductor

CY62177EV18 MoBL®: 32-Mbit (2 M × 16 / 4 M × 8) Static RAM

Last Updated: 
Aug 26, 2015
Version: 
*C

32-Mbit (2 M × 16 / 4 M × 8) Static RAM

Features

  • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM)
  • Very high speed
    • 70 ns
  • Wide voltage range
    • 1.65 V to 2.25 V
  • Ultra low standby power
    • Typical standby current: 3 μA
    • Maximum standby current: 25 μA
  • Ultra low active power
    • Typical active current: 4.5 mA at f = 1 MHz
  • For more, see pdf

Functional Description

The CY62177EV18 is a high-performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications, such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.