You are here

CY62177ESL MoBL: 32-Mbit (2 M × 16/4 M × 8) Static RAM | Cypress Semiconductor

CY62177ESL MoBL: 32-Mbit (2 M × 16/4 M × 8) Static RAM

Last Updated: 
Nov 30, 2015
Version: 
*E

32-Mbit (2 M × 16/4 M × 8) Static RAM

Features

  • Thin small outline package-I (TSOP-I) configurable as 2 M x 16 or as 4 M x 8 static RAM (SRAM)
  • High-speed up to 55 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 3 μA
    • Maximum standby current: 25 μA
  • Ultra low active power
  • Typical active current: 4.5 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE Features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 48-ball TSOP-I package

Functional Description

The CY62177ESL is a high performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.