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CY62168G, CY62168GE MoBL®: 16-Mbit (2 M words × 8 bits) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY62168G, CY62168GE MoBL®: 16-Mbit (2 M words × 8 bits) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Nov 22, 2016
Version: 
*H

16-Mbit (2 M words × 8 bits) Static RAM with Error-Correcting Code (ECC)

Features

  • Ultra-low standby power
    • Typical standby current: 5.5 µA
    • Maximum standby current: 16 µA
  • High speed: 45 ns / 55 ns
  • Embedded error-correcting code (ECC) for single-bit error correction
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • 1.0 V data retention
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • ERR pin to indicate 1-bit error detection and correction
  • Available in Pb-free 48-ball VFBGA package

Functional Description

CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62168GE device includes an error indication pin that signals a single-bit error-detection and correction event during a read cycle.

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