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CY62168DV30 MoBL®: 16-Mbit (2 M × 8) Static RAM | Cypress Semiconductor

CY62168DV30 MoBL®: 16-Mbit (2 M × 8) Static RAM

Last Updated: 
Dec 22, 2015
Version: 
*M

16-Mbit (2 M × 8) Static RAM

Features

  • Very high speed
    • 55 ns
  • Wide voltage range
    • 2.2V – 3.6V
  • Ultra-low active power
    • Typical active current: 2 mA @ f = 1 MHz
    • Typical active current: 15 mA @ f = fMax (55 ns Speed)
  • Ultra-low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor(CMOS) for optimum speed/power
  • Available in non Pb-free 48-ball very fine ball grid array (VFBGA) package
     

Functional Description

The CY62168DV30 is a high-performance CMOS static RAMs organized as 2048Kbit words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.