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CY62167E: 16-Mbit (1 M × 16 / 2 M × 8) Static RAM | Cypress Semiconductor

CY62167E: 16-Mbit (1 M × 16 / 2 M × 8) Static RAM

Last Updated: 
Aug 27, 2015
Version: 
*G

16-Mbit (1 M × 16 / 2 M × 8) Static RAM

Features

  • Configurable as 1 M × 16 or as 2 M × 8 SRAM
  • Very high speed: 45 ns
  • Wide voltage range: 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed and power
  • Offered in 48-pin TSOP I package

Functional Description

The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling.