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CY62167DV30: 16-Mbit (1M x 16) Static RAM | Cypress Semiconductor

CY62167DV30: 16-Mbit (1M x 16) Static RAM

Last Updated: 
Aug 17, 2015

16-Mbit (1M x 16) Static RAM


  • Thin small outline package(TSOP I )Configurable as 1M x 16 or as 2M x 8 SRAM
  • Wide voltage range: 2.2V – 3.6V
  • Ultra-low active power: Typical active current: 2 mA at f = 1 MHz
  • Ultra-low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed / power
  • Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 48-pin TSOP I package

Functional Description

The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling.