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CY62156ESL MoBL®: 8-Mbit (512 K × 16) Static RAM | Cypress Semiconductor

CY62156ESL MoBL®: 8-Mbit (512 K × 16) Static RAM

Last Updated: 
Aug 31, 2015

8-Mbit (512 K × 16) Static RAM


  • High Speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra Low Standby Power
  • Ultra Low Active Power
  • Easy Memory Expansion with CE1, CE2, and OE Features
  • Automatic Power Down when Deselected
  • For more, see pdf

The CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.