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CY62148ESL MoBL®: 4-Mbit (512 K × 8) Static RAM | Cypress Semiconductor

CY62148ESL MoBL®: 4-Mbit (512 K × 8) Static RAM

Last Updated: 
Nov 23, 2015

4-Mbit (512 K × 8) Static RAM


  • Higher speed up to 55 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 32-Pin shrunk thin small outline package (STSOP) package

Functional Description

The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH).