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CY62148E MoBL®: 4-Mbit (512 K × 8) Static RAM | Cypress Semiconductor

CY62148E MoBL®: 4-Mbit (512 K × 8) Static RAM

Last Updated: 
Jun 05, 2016

4-Mbit (512 K × 8) Static RAM


  • Very high speed: 45 ns
  • Voltage range: 4.5 V to 5.5 V
  • Pin compatible with CY62148B
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA (Industrial)
  • Ultra low active power
    • Typical active current: 2.0 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • For more, see pdf

Functional Description

The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling.