You are here

CY62147G/CY621472G/CY62147GE MoBL®, 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY62147G/CY621472G/CY62147GE MoBL®, 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Jul 12, 2017
Version: 
*J

4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC)

Features

  • High speed: 45 ns/55 ns
  • Ultra-low standby power
    • Typical standby current: 3.5 μA
    • Maximum standby current: 8.7 μA
  • Embedded ECC for single-bit error correction
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • 1.0-V data retention
  • TTL-compatible inputs and outputs
  • Error indication (ERR) pin to indicate 1-bit error detection and correction
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages

Functional Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

Translated documents are for reference only. We recommend that you refer to the English-language version of a document if you are engaged in development of a design.