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CY62147EV30 MOBL®, 4-Mbit (256K X 16) Static RAM | Cypress Semiconductor

CY62147EV30 MOBL®, 4-Mbit (256K X 16) Static RAM

Last Updated: 
Sep 26, 2016

4-Mbit (256 K x 16) Static RAM


  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40°C to 85°C
  • Wide voltage range: 2.20V to 3.60V
  • Pin compatible with CY62147DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA (Industrial)
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • For more, see pdf

Functional Description

The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.