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CY62146E: 4-Mbit (256 K x 16) Static RAM | Cypress Semiconductor

CY62146E: 4-Mbit (256 K x 16) Static RAM

Last Updated: 
Apr 17, 2016

4-Mbit (256 K x 16) Static RAM


  • Very high speed: 45 ns
  • Wide voltage range: 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package

Functional Description

The CY62146E is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH).