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CY62137EV30 MoBL®: 2-Mbit (128 K × 16) Static RAM | Cypress Semiconductor

CY62137EV30 MoBL®: 2-Mbit (128 K × 16) Static RAM

Last Updated: 
Nov 29, 2015

2-Mbit (128K x 16) Static RAM


  • Very high speed: 45 ns
  • Wide voltage range: 2.20V to 3.60 V
  • Pin-compatible with CY62137CV30
  • Ultra-low standby power
    • Typical standby current: 1μA
    • Maximum standby current: 7μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • For more, see pdf
Functional Description

The CY62137EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling.