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CY62127DV30: MoBL® 1-Mbit (64 K × 16) Static RAM | Cypress Semiconductor

CY62127DV30: MoBL® 1-Mbit (64 K × 16) Static RAM

Last Updated: 
Sep 26, 2016

1-Mbit (64 K × 16) Static RAM


  • Temperature ranges
    • Industrial: –40 °C to 85 °C
  • Very high speed: 55 ns
  • Wide voltage range: 2.2 V to 3.6 V
  • Pin compatible with CY62127BV
  • Ultra-low active power
    • Typical active current: 0.85 mA at f = 1 MHz
    • Typical active current: 5 mA at f = fMAX
  • Ultra-low standby power
  • Easy memory expansion with CE and OE features
  • Automatic power-down when deselected
  • Available in Pb-free 48-ball FBGA and 44-pin TSOP Type II packages

Functional Description

The CY62127DV30 is a high-performance CMOS static RAM organized as 64 K words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.