You are here

CY15B102Q, 2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM Datasheet | Cypress Semiconductor

CY15B102Q, 2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM Datasheet

Last Updated: 
May 08, 2017
Version: 
*F

2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM

Features

  • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8
    • High-endurance 10 trillion (1013) read/writes
    • 121-year data retention
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
    • Up to 25 MHz frequency
    • Direct hardware replacement for serial flash and EEPROM
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Sophisticated write protection scheme
    • Hardware protection using the Write Protect (WP) pin
    • Software protection using Write Disable instruction
    • Software block protection for 1/4, 1/2, or entire array
  • For more, see pdf

Functional Overview

The CY15B102Q is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.