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CY15B101N: 1-Mbit (64K × 16) Automotive F-RAM Memory | Cypress Semiconductor

CY15B101N: 1-Mbit (64K × 16) Automotive F-RAM Memory

Last Updated: 
Sep 18, 2015

1-Mbit (64K × 16) Automotive F-RAM Memory


  • 1-Mbit ferroelectric random access memory (F-RAM™) logically organized as 64K × 16
    • Configurable as 128K × 8 using UB and LB
    • High-endurance 100 trillion (1014) read/writes
    • 151-year data retention
    • NoDelay™ writes
    • Page-mode operation for 30-ns cycle time
    • Advanced high-reliability ferroelectric process
  • SRAM compatible
    • Industry-standard 64K × 16 SRAM pinout
    • 60-ns access time, 90-ns cycle time
  • For more, see pdf

Functional Overview

The CY15B101N is a 64K × 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write-timing and high write-endurance make the F-RAM superior to other types of memory.