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CY14V256LA: 256-Kbit (32 K x 8) nvSRAM | Cypress Semiconductor

CY14V256LA: 256-Kbit (32 K x 8) nvSRAM

Last Updated: 
Feb 15, 2018

256-Kbit (32 K × 8) nvSRAM


  • 35 ns access time
  • Internally organized as 32 K × 8
  • Hands off automatic STORE on power down with only a small capacitor
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power down
  • RECALL to SRAM initiated by software or power up
  • Infinite read, write, and recall cycles
  • 1 million STORE cycles to QuantumTrap
  • 20 year data retention
  • Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
  • Industrial temperature
  • 48-ball fine-pitch ball grid array (FBGA) package
  • Pb-free and restriction of hazardous substances (RoHS) compliance

Functional Description

The Cypress CY14V256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

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