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CY14V116N: 16-Mbit (1024 K × 16) nvSRAM | Cypress Semiconductor

CY14V116N: 16-Mbit (1024 K × 16) nvSRAM

Last Updated: 
Aug 17, 2015

16-Mbit (1024 K × 16) nvSRAM


  • 16-Mbit nonvolatile static random access memory (nvSRAM)
  • High reliability
  • Sleep mode operation
  • Low power consumption
  • Operating voltage
  • Industrial temperature: –40 °C to +85 °C
  • 165-ball fine-pitch ball grid array (FBGA) package
  • Restriction of hazardous substances (RoHS) compliant
  • For more, see pdf.

Functional Description

The Cypress CY14V116N is a fast SRAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM.