You are here

CY14B256LA: 256-Kbit (32 K × 8) nvSRAM | Cypress Semiconductor

CY14B256LA: 256-Kbit (32 K × 8) nvSRAM

Last Updated: 
Oct 05, 2015

256-Kbit (32 K × 8) nvSRAM


  • 25 ns and 45 ns access times
  • Internally organized as 32 K × 8 (CY14B256LA)
  • Hands off automatic STORE on power-down with only a small capacitor
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down
  • RECALL to SRAM initiated by software or power-up
  • Infinite read, write, and recall cycles
  • 1 million STORE cycles to QuantumTrap
  • 20-year data retention
  • Single 3 V 20% to –10% operation
  • Industrial temperature
  • 44-pin thin small outline package (TSOP) II, 48-pin shrunk small outline package (SSOP), and 32-pin small-outline integrated circuit (SOIC) packages
  • Pb-free and restriction of hazardous substances (RoHS) compliance

Functional Description

The Cypress CY14B256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the  STORE operation) takes place automatically at power-down. On  power-up, data is restored to the SRAM (the RECALL operation)  from the nonvolatile memory. Both the STORE and RECALL  operations are also available under software control.  

Translated documents are for reference only. We recommend that you refer to the English-language version of a document if you are engaged in development of a design.