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CY14B104NA, 4-Mbit (256K × 16) Automotive nvSRAM | Cypress Semiconductor

CY14B104NA, 4-Mbit (256K × 16) Automotive nvSRAM

Last Updated: 
Jan 17, 2017


  • 25 ns and 45 ns access times
  • Internally organized as 256 K × 16
  • Hands off automatic STORE on power-down with only a small capacitor
  • STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
  • RECALL to SRAM initiated by software or power-up
  • High reliability
    • Infinite read, write, and recall cycles
    • STORE cycles to QuantumTrap
      • Automotive-A: 1,000 K STORE cycles
      • Automotive-E: 100 K STORE cycles
  • Data retention
    • Automotive-A: 20 years
    • Automotive-E: 1 year
  • Automotive-A Temperature: -40 °C to +85 °C
    • Single 3 V +20%, -10% Operation
  • Automotive-E Temperature: -40 °C to +125 °C
    • Single 3.3 V +0.3 V Operation
  • Package
    • 48-ball fine-pitch ball grid array (FBGA)
  • Pb-free and restriction of hazardous substances (RoHS) compliant

Functional Description
The Cypress CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 256 K words of 16-bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world?s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.