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AN96592 - Migrating from Everspin 4-Mbit SPI MRAM (MR2xH40) to Cypress's 4-Mbit SPI F-RAM (CY15B104Q) | Cypress Semiconductor

AN96592 - Migrating from Everspin 4-Mbit SPI MRAM (MR2xH40) to Cypress's 4-Mbit SPI F-RAM (CY15B104Q)

Last Updated: 
Aug 22, 2017
Version: 
*B

AN96592 provides an overview of advantages and potential differences to be considered when migrating from Everspin's 4-Mbit SPI MRAM (MR2xH40) to Cypress's high-reliability and energy-efficient 4-Mbit SPI F-RAM (CY15B104Q).

Introduction

Cypress’s F-RAM products offer virtually unlimited endurance of 1014 cycles, orders of magnitude higher than typical serial nonvolatile memories such as EEPROM and flash. Also, F-RAM exhibits a lower power consumption than serial EEPROM, flash, and MRAM memories. In addition, the data stored in the F-RAM array does not get corrupted in magnetic field environments, thereby making F-RAM the best choice of the nonvolatile memory for critical data logging for the majority of the industrial applications operating in magnetic field environments. The closest alternative solution, the SPI MRAM, uses magnetic storage elements (ferromagnetic plates) to store information, which makes it highly susceptible to any magnetic field causing data corruption.

This application note highlights differences between the 4-Mbit SPI MRAM (MR2xH40) and the 4-Mbit SPI F-RAM (CY15B104Q). These differences need to be considered when migrating from MR2xH40 to Cypress’s CY15B104Q part.

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