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AN302 - F-RAM™ SPI Read and Write Internal Operation and Data Protection | Cypress Semiconductor

AN302 - F-RAM™ SPI Read and Write Internal Operation and Data Protection

Last Updated: 
Apr 25, 2017
Version: 
*D
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The document AN302 - F-RAM™ SPI Read and Write Internal Operation and Data Protection has been marked as obsolete. The obsolete version of this application note is still available with the below description but may not be complete or valid any longer. If you have any questions or require support in regards to the below application note content, please click here and create a technical support case.

AN302 discusses the importance of keeping HIGH during power transitions and suggests a circuit to accomplish this. It also describes the internal operation of Cypress's high-speed SPI F-RAM devices during memory read & write operations

Overview

Ferroelectric random access memory (F-RAM) is a nonvolatile memory that uses a ferroelectric technology for storing data. The SPI F-RAM scores over other nonvolatile serial memory options due to its fast write speed and endurance (the number of writes that can be done before damaging the F-RAM’s nonvolatile cells). Hundreds of bytes can be written in tens of microseconds. EEPROM and flash memories require tens of milliseconds to do the same. Writing data quickly before losing power is particularly useful in systems that require preserving machine state information, parameter settings, or other vital data in a power-down event. To preserve data make certain to control signals at both power up and power down.