You are here

AN5011 - Radiation Hardening of Cypress STAR Sensors | Cypress Semiconductor

AN5011 - Radiation Hardening of Cypress STAR Sensors

Last Updated: 
Feb 09, 2016
This is an Obsolete Application Note
The document AN5011 - Radiation Hardening of Cypress STAR Sensors has been marked as obsolete. The obsolete version of this application note is still available with the below description but may not be complete or valid any longer. If you have any questions or require support in regards to the below application note content, please click here and create a technical support case.

Several types of radiation can cause degradation effects in solid-state imagers. Two basic mechanisms can be distinguished: generation of electron-hole pairs (ionization) and the displacement of atoms from their lattice positions (displacement damage). In general, particles passing through a silicon device will lose their energy by ionization of the silicon and the oxides and deposit the remainder of the energy into displacement. The deposition of energy by means of ionization can lead to transient or permanent degradation due to an accumulation of a certain total ionizing dose.


Typically, the latter type of degradation is studied by means of gamma rays from a Co-60 source. On the other hand, single heavy ions can generate enough electron-hole pairs to cause single event effects (SEE). Displacement damage effect studies are mostly performed by use of energetic protons.