AN5011 - Radiation Hardening of Cypress STAR Sensors | Cypress Semiconductor
AN5011 - Radiation Hardening of Cypress STAR Sensors
Several types of radiation can cause degradation effects in solid-state imagers. Two basic mechanisms can be distinguished: generation of electron-hole pairs (ionization) and the displacement of atoms from their lattice positions (displacement damage). In general, particles passing through a silicon device will lose their energy by ionization of the silicon and the oxides and deposit the remainder of the energy into displacement. The deposition of energy by means of ionization can lead to transient or permanent degradation due to an accumulation of a certain total ionizing dose.
Typically, the latter type of degradation is studied by means of gamma rays from a Co-60 source. On the other hand, single heavy ions can generate enough electron-hole pairs to cause single event effects (SEE). Displacement damage effect studies are mostly performed by use of energetic protons.