Non-Volatile F-RAM for IoT Projects | Cypress Semiconductor
Non-Volatile F-RAM for IoT Projects
Did you know that every BLE Pioneer Kit has an onboard, 100-trillion read/write capable Cypress F-RAM device?
Cypress's Ferroelectric RAM (F-RAM) is a type of non-volatile memory that has three distinct advantages over traditional non-volatile memories: high speed, high endurance, and low energy consumption. These F-RAM devices communicate with the host controller over a serial interface (I2C in this case) that do not have any write delays such that the data is instantly nonvolatile. This is crucial for mission-criticial tasks such as BLE firmware upgrades via bootloading, where any interruption in power can typically be catastrophic to the system. The F-RAM devices also offer virtually unlimited endurance, as they are rated for 100 trillion read/writes when compared to traditional nonvolatlie memories, which is useful for storage of vital data in sensor-based applications. Most importantly, these F-RAM devices consume only 300-A of active power and 6-A of standby current, allowing for extermely low-power systems for your BLE products.
Learn how to use Cypress F-RAM with Bluetooth Low Energy products using these two PSoC Creator example projects for the BLE Pioneer Kit: