Cypress Perform

Home > Documentation > Datasheets

FM28V202: 2Mbit (128K×16)F-RAM Memory

Last Updated: 03/22/2013
Version: **


Features

2Mbit Ferroelectric Nonvolatile RAM

  • Organized as 128Kx16
  • Configurable as 256Kx8 Using /UB, /LB
  • 1014 Read/Write Cycles
  • NoDelay™ Writes
  • Page Mode Operation to 33MHz
  • Advanced High-Reliability Ferroelectric Process
  • For more, see pdf


Description

The FM28V202 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.


这些文档仅供参考。赛普拉斯、赛普拉斯管理层、雇员及分销商对翻译错误不承担任何责任。当您在设计开发过程中使用这些文档时,我们强烈建议您参照英文版本。

これらの文献はあくまでもご参考のためのみに日本語翻訳されています。誤訳によるトラブルが発生した場合、Cypress Semiconductor Corp. 全ての子会社、関連会社、役員、従業員、販売代理店は一切の責任を負いかねます。 最新の英語版オリジナル文献を必ずご参照いただくことをお勧め致します。




Related Files

    File Title Language File Size Last Updated
      FM28V202.pdf English 474 KB 03/22/2013
    Need help? Ask a question and find answers in the Cypress Developer Community Forums.

    Low/intermittent bandwidth users tip: Firefox and Chrome browsers will allow downloads to be resumed if your connection is lost during download.


Spec No: 001-86602; Sunset Owner: GVCH; Secondary Owner: PSR; Sunset Date: 08/19/13

Rate Datasheet

Related Pages

Related Parts

Spec No: 001-86602; Sunset Owner: GVCH; Secondary Owner: PSR; Sunset Date: 08/19/13