4-Mbit (512 K × 8) Static RAM with RadStop™ Technology
Features
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Temperature ranges
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Military/Space: -55 °C to 125 °C
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High speed
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Low active power
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ICC = 95 mA at 12 ns (PMAX = 315 mW)
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Low CMOS standby power
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2.0 V data retention
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Automatic power-down when deselected
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Transistor-transistor logic (TTL) compatible inputs and outputs
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Easy memory expansion with CE and OE features
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Available in Pb-free 36-pin ceramic flat package
Functional Description
The CYRS1049DV33 is a high-performance complementary metal oxide semiconductor (CMOS) static RAM organized as 512 K words by 8 bits with RadStop™ technology. Cypress’s state-of-the-art RadStop technology is radiation hardened through proprietary design and process hardening techniques. The 4-Mbit fast asynchronous SRAM with RadStop technology is also QML V certified with Defense Logistics Agency Land and Maritime (DLAM).
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