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WM72016-6: 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access

Last Updated: 03/14/2013
Version: **

FEATURES

16 Kbit Ferroelectric Nonvolatile RAM

  • Organized as 1024 x 16 bits
  • Very High Read/Write Endurance (> 1014)
  • 20-Year Data Retention
  • Gamma Stability Demonstrated to > 30 kGy
  • Symmetric Read/Write Operation
  • Advanced High-Reliability Ferroelectric Process
  • For more, see pdf.


DESCRIPTION

The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 20 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

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Related Files

    File Title Language File Size Last Updated
      WM72016-6.pdf English 766 KB 03/14/2013
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Spec No: 001-86227; Sunset Owner: GVCH; Secondary Owner: PSR; Sunset Date: 06/19/13
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Spec No: 001-86227; Sunset Owner: GVCH; Secondary Owner: PSR; Sunset Date: 06/19/13