Features
2Mbit Ferroelectric Nonvolatile RAM
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Organized as 128Kx16
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Configurable as 256Kx8 Using /UB, /LB
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1014 Read/Write Cycles
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NoDelay™ Writes
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Page Mode Operation to 33MHz
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Advanced High-Reliability Ferroelectric Process
Description
The FM21LD16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. In-system operation of the FM21LD16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM21LD16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM.
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