512 K × 8 Static RAM
Features
-
High speed
-
Low active power
-
Low CMOS standby power
-
2.0 V data retention (400 µW at 2.0 V retention)
-
Automatic power-down when deselected
-
TTL-compatible inputs and outputs
-
Easy memory expansion with CE and OE features
Functional Description
The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).
|