18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
Features
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18 Mbit density (1 M x 18, 512 K x 36)
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450-MHz clock for high bandwidth
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Two-word burst for reducing address bus frequency
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Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz
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Available in 2.0 clock cycle latency
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For more, see pdf
Functional Description
The CY7C1148KV18, and CY7C1150KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock.
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