Cypress's 2-Mbit and 8-Mbit non-volatile static random access memories extend Cypress's nvSRAM portfolio from 16-Kbit to 8-Mbit. The new devices feature access times as low as 20 ns, infinite read, write and recall cycles, and 20-year data retention. They offer the best solution for applications requiring continuous high-speed writing of data and absolute non-volatile data security. Systems requiring nvSRAM functionality include servers, RAID applications, harsh-environment industrial controls, automotive, medical and data communications.

The CY14B102 2-Mbit nvSRAM and CY14B108 8-Mbit nvSRAM are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRAM to the device's nonvolatile elements take place automatically at power down. On power up, data is restored to the SRAM from the nonvolatile memory. Both operations are also available under software control. The new nvSRAMs are manufactured on Cypress's S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance.

Click on the download link below for a high-resolution jpeg image of the 2- and 8-Mbit nvSRAMs.