256-Kb (256 K × 1) Static RAM
Features
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Fast access time: 15 ns
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Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
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CMOS for optimum speed and power
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TTL compatible inputs and outputs
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Available in 24-pin DIP and 24-pin SOJ
General Description
The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256 K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected.
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