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CY7C1399BN: 256 K (32 K × 8) Static RAM

Last Updated: 07/30/2012
Version: *D


256K (32K x 8) Static RAM

Features

  • Temperature Ranges
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
  • Single 3.3V power supply
  • Ideal for low-voltage cache memory applications
  • High speed: 12 ns
  • Low active power
    • 180 mW (max.)
  • Low-power alpha immune 6T cell
  • Available in Pb-free and non Pb-free Plastic SOJ and TSOP I packages
     

Functional Description

The CY7C1399BN is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tristate drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.

An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14).


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Related Files

    File Title Language File Size Last Updated
      CY7C1399BN.pdf English 382 KB 10/12/2011
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Spec No: 001-06490; Sunset Owner: NIKM; Secondary Owner: SNU; Sunset Date: 06/06/11

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